IRF5850TRPBF

P-channel, 2-element silicon Metal-oxide Semiconductor FET with a continuous drain current of 2.2A and a drain-to-source breakdown voltage of -20V. Features a low Rds On of 135mR, turn-on delay time of 8.3ns, and fall time of 28ns. This surface mount device is housed in a compact TSOP package with dimensions of 3mm (length) x 1.75mm (width) x 1.15mm (height). Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 960mW.