N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 package. Features 2.7A continuous drain current and 20V drain-to-source breakdown voltage. Offers 90mΩ drain-to-source resistance and 400pF input capacitance. Operates from -55°C to 150°C with a 960mW power dissipation. Includes 6.6ns turn-on delay and 15ns turn-off delay. Surface mountable, RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power960mW
Quick Jump:
Technical Specifications
International Rectifier IRF5852TRPBF technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
2.4ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.9mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
1.25V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.25V
Turn-Off Delay Time
15ns
Turn-On Delay Time
6.6ns
Width
1.5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5852TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5852TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
