
N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 package. Features 2.7A continuous drain current and 20V drain-to-source breakdown voltage. Offers 90mΩ drain-to-source resistance and 400pF input capacitance. Operates from -55°C to 150°C with a 960mW power dissipation. Includes 6.6ns turn-on delay and 15ns turn-off delay. Surface mountable, RoHS compliant.
International Rectifier IRF5852TRPBF technical specifications.
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