N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 package. Features 2.7A continuous drain current and 20V drain-to-source breakdown voltage. Offers 90mΩ drain-to-source resistance and 400pF input capacitance. Operates from -55°C to 150°C with a 960mW power dissipation. Includes 6.6ns turn-on delay and 15ns turn-off delay. Surface mountable, RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power960mW
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Technical Specifications
International Rectifier IRF5852TRPBF technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 2.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.9mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.25V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.25V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.6ns |
| Width | 1.5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5852TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5852TRPBF to view detailed technical specifications.
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