Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, FLIPFET, ISOMETRIC-4
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International Rectifier IRF6100 technical specifications.
| Continuous Drain Current (ID) | 5.1A |
| Current Rating | -5.1A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.23nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 65mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
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