International Rectifier
IRF620
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Voltage200V
Current52A
Current Rating5.2A
Power50W
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Technical Specifications
International Rectifier IRF620 technical specifications.
General
| Continuous Drain Current (ID) | 5.2A |
| Current | 52A |
| Current Rating | 5.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 50W |
| RoHS Compliant | No |
| Voltage | 200V |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF620 Datasheet
Download the complete datasheet for International Rectifier IRF620 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.