P-channel power MOSFET featuring 150V drain-source voltage and 290mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of -13A and a maximum power dissipation of 110W. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 14ns and fall time of 37ns. The silicon metal-oxide semiconductor FET is housed in a TO-262 package and is RoHS compliant.
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International Rectifier IRF6215LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | -13A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 860pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| Width | 4.83mm |
| RoHS | Compliant |
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