P-channel power MOSFET featuring 150V drain-source voltage and 290mΩ maximum drain-source on-resistance. This through-hole component offers a continuous drain current of -13A and a maximum power dissipation of 110W. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 14ns and fall time of 37ns. The silicon metal-oxide semiconductor FET is housed in a TO-262 package and is RoHS compliant.
PackageTO-262
MountingThrough Hole
PolarityP-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRF6215LPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
-13A
Drain to Source Breakdown Voltage
-150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
290mR
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
860pF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
290mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
-4V
Turn-Off Delay Time
53ns
Turn-On Delay Time
14ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6215LPBF Datasheet
Download the complete datasheet for International Rectifier IRF6215LPBF to view detailed technical specifications.
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