P-Channel Power MOSFET featuring 150V drain-source voltage and 13A continuous drain current. Offers a low 290mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -4V. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 110W. Includes lead-free and RoHS compliant construction.
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International Rectifier IRF6215PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 290mR |
| Dual Supply Voltage | -150V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -150V |
| Width | 4.69mm |
| RoHS | Compliant |
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