P-channel power MOSFET with 150V drain-source breakdown voltage and 13A continuous drain current. Features 290mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 110W. This surface-mount device is housed in a D2PAK package and offers fast switching speeds with turn-on delay of 14ns and fall time of 37ns.
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International Rectifier IRF6215SPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 290mR |
| Dual Supply Voltage | 150V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -150V |
| Width | 9.65mm |
| RoHS | Compliant |
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