P-channel power MOSFET with 150V drain-source breakdown voltage and 13A continuous drain current. Features 290mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -4V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 110W. This surface-mount device is housed in a D2PAK package and offers fast switching speeds with turn-on delay of 14ns and fall time of 37ns.
PackageD2PAK
Current Rating-13A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRF6215SPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
13A
Current Rating
-13A
Drain to Source Breakdown Voltage
-150V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
290mR
Dual Supply Voltage
150V
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
860pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Nominal Vgs
-4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
53ns
Turn-On Delay Time
14ns
DC Rated Voltage
-150V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6215SPBF Datasheet
Download the complete datasheet for International Rectifier IRF6215SPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
