P-channel power MOSFET featuring a 150V drain-to-source breakdown voltage and 13A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 290mΩ drain-to-source resistance. Designed for surface mounting in a D2PAK package, it operates across a temperature range of -55°C to 175°C with a maximum power dissipation of 3.8W. Key switching characteristics include a 14ns turn-on delay and a 37ns fall time.
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International Rectifier IRF6215STRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -150V |
| Width | 9.65mm |
| RoHS | Compliant |
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