Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Sign in to ask questions about the International Rectifier IRF6216TRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF6216TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 240mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.28nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 20V |
| Package Quantity | 4000 |
| Packaging | Cut Tape |
| Rds On Max | 240mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 18ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF6216TRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
