P-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOP-8 package. This component features a continuous drain current of 700mA and a drain-to-source voltage of 150V. It offers a maximum drain-source on-resistance of 2.4 Ohms and a gate-to-source voltage of 20V. Operating within a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2.5W and a turn-on delay time of 12ns.
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International Rectifier IRF6217TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 2.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 20V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 2.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 12ns |
| Width | 4mm |
| RoHS | Compliant |
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