IRF6217TRPBF

150V P-Ch MOSFET, 0.7A ID, 2.4R Rds(on), SOIC

P-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOP-8 package. This component features a continuous drain current of 700mA and a drain-to-source voltage of 150V. It offers a maximum drain-source on-resistance of 2.4 Ohms and a gate-to-source voltage of 20V. Operating within a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2.5W and a turn-on delay time of 12ns.

PackageSOIC

MountingSurface Mount

Power2.5W

Quick Jump:

Technical Specifications

International Rectifier IRF6217TRPBF technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	700mA
Drain to Source Voltage (Vdss)	150V
Drain-source On Resistance-Max	2.4R
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	150pF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Nominal Vgs	20V
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Power Dissipation	2.5W
Rds On Max	2.4R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Turn-Off Delay Time	14ns
Turn-On Delay Time	12ns
Width	4mm