Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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International Rectifier IRF630N technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| DC Rated Voltage | 200V |
| RoHS | Not CompliantNo |
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