Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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International Rectifier IRF630NPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 575pF |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 82W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 7.9ns |
| DC Rated Voltage | 200V |
| Width | 4.69mm |
| RoHS | Compliant |
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