International Rectifier
IRF630NPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
Current Rating9.3A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF630NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
9.3A
Current Rating
9.3A
Drain to Source Voltage (Vdss)
200V
Dual Supply Voltage
200V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
575pF
Lead Free
Lead Free
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
82W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
27ns
Turn-On Delay Time
7.9ns
DC Rated Voltage
200V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF630NPBF Datasheet
Download the complete datasheet for International Rectifier IRF630NPBF to view detailed technical specifications.
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