IRF630NS

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

PackageTO-263-3

MountingSurface Mount

Quick Jump:

International Rectifier IRF630NS technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

9.3A

Drain to Source Voltage (Vdss)

200V

Input Capacitance

575pF

Max Power Dissipation

82W

Mount

Surface Mount

Package Quantity

200

Packaging

Rail/Tube

Rds On Max

300mR

RoHS Compliant

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.