Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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International Rectifier IRF630NS technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 575pF |
| Max Power Dissipation | 82W |
| Mount | Surface Mount |
| Package Quantity | 200 |
| Packaging | Rail/Tube |
| Rds On Max | 300mR |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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