N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source breakdown voltage and 9.3A continuous drain current. Achieves 0.3 ohm drain-source on-resistance at a nominal gate-source voltage of 4V. Offers a maximum power dissipation of 82W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 7.9ns and fall time of 15ns. Surface mountable and RoHS compliant.
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International Rectifier IRF630NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 300mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 575pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 82W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 300mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 7.9ns |
| DC Rated Voltage | 200V |
| Width | 9.65mm |
| RoHS | Compliant |
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