N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source breakdown voltage and 9.3A continuous drain current. Achieves 0.3 ohm drain-source on-resistance at a nominal gate-source voltage of 4V. Offers a maximum power dissipation of 82W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 7.9ns and fall time of 15ns. Surface mountable and RoHS compliant.
PackageD2PAK
Current Rating9.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF630NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
9.3A
Current Rating
9.3A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
300mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
575pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
82W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
300mR
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
82W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
27ns
Turn-On Delay Time
7.9ns
DC Rated Voltage
200V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF630NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF630NSPBF to view detailed technical specifications.
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