International Rectifier
IRF630NSTRRPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
Current Rating9.3A
MountingSurface Mount
Power82W
Quick Jump:
Technical Specifications
International Rectifier IRF630NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 7.9ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF630NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF630NSTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
