N-Channel Power MOSFET, TO-220 package, featuring 200V drain-source breakdown voltage and 18A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.18ohm drain-source resistance and 125W maximum power dissipation. With a 20V gate-source voltage rating, it operates from -55°C to 150°C and includes through-hole mounting. Key switching parameters include a 14ns turn-on delay and 36ns fall time.
PackageTO-220
Current Rating18A
MountingThrough Hole
Power125W
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Technical Specifications
International Rectifier IRF640 technical specifications.
General
Package/Case
TO-220
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Element Configuration
Single
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Packaging
Bulk
Power Dissipation
125W
Radiation Hardening
No
RoHS Compliant
No
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
DC Rated Voltage
200V
Weight
6.000006g
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF640 Datasheet
Download the complete datasheet for International Rectifier IRF640 to view detailed technical specifications.
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