N-Channel Power MOSFET, TO-220 package, featuring 200V drain-source breakdown voltage and 18A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.18ohm drain-source resistance and 125W maximum power dissipation. With a 20V gate-source voltage rating, it operates from -55°C to 150°C and includes through-hole mounting. Key switching parameters include a 14ns turn-on delay and 36ns fall time.
PackageTO-220
Current Rating18A
MountingThrough Hole
Power125W
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Technical Specifications
International Rectifier IRF640 technical specifications.
General
| Package/Case | TO-220 |
| Contact Plating | Tin, Lead |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 200V |
| Weight | 6.000006g |
| Width | 4.7mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF640 Datasheet
Download the complete datasheet for International Rectifier IRF640 to view detailed technical specifications.
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