International Rectifier
IRF640NLPBF
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
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Technical Specifications
International Rectifier IRF640NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
18A
Drain to Source Voltage (Vdss)
200V
Input Capacitance
1.16nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
150mR
RoHS Compliant
Yes
Series
HEXFET®
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF640NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF640NLPBF to view detailed technical specifications.
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