The IRF640NLPBF is a HEXFET MOSFET with a maximum drain to source voltage of 200V and continuous drain current of 18A. It features a maximum power dissipation of 150W and an on-resistance of 150mR. The device is packaged in a TO-262 case and is designed for through hole mounting. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
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International Rectifier IRF640NLPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 1.16nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF640NLPBF to view detailed technical specifications.
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