N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source voltage and 18A continuous drain current. Offers a low 0.15 ohm maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This silicon, metal-oxide semiconductor FET supports surface mounting and has a maximum power dissipation of 150W.
PackageD2PAK
Current Rating18A
MountingSurface Mount
Power150W
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Technical Specifications
International Rectifier IRF640NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
150mR
Dual Supply Voltage
200V
Fall Time
5.5ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.16nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
150W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
DC Rated Voltage
200V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF640NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF640NSPBF to view detailed technical specifications.
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