N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source voltage and 18A continuous drain current. Offers a low 0.15 ohm maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum gate-source voltage of 20V. This silicon, metal-oxide semiconductor FET supports surface mounting and has a maximum power dissipation of 150W.
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International Rectifier IRF640NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Dual Supply Voltage | 200V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 150W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 200V |
| Width | 9.65mm |
| RoHS | Compliant |
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