N-Channel Power MOSFET, 200V Drain-Source Voltage, 18A Continuous Drain Current, and 0.15 Ohm Max Drain-Source On-Resistance. Features include a 1.16nF input capacitance, 10ns turn-on delay, and 23ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-263 surface-mount package, rated for 150W maximum power dissipation, and operates from -55°C to 175°C. It is RoHS compliant and lead-free.
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International Rectifier IRF640NSTRLPBF technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Packaging | Tape and Reel |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 200V |
| Width | 9.65mm |
| RoHS | Compliant |
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