IRF640NSTRLPBF

N-Channel Power MOSFET, 200V Drain-Source Voltage, 18A Continuous Drain Current, and 0.15 Ohm Max Drain-Source On-Resistance. Features include a 1.16nF input capacitance, 10ns turn-on delay, and 23ns turn-off delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-263 surface-mount package, rated for 150W maximum power dissipation, and operates from -55°C to 175°C. It is RoHS compliant and lead-free.