N-channel Power MOSFET, 30V drain-source breakdown voltage, 24A continuous drain current, and 4.4mΩ drain-source resistance at 1.8V nominal gate-source voltage. Features low on-resistance (Rds On Max 3.3mΩ), fast switching speeds with turn-on delay of 15ns and fall time of 4.8ns. Operates within a temperature range of -40°C to 150°C, with a maximum power dissipation of 89W. Surface mountable in a 7-pin Direct-FET MX package, supplied on tape and reel. RoHS compliant.
Sign in to ask questions about the International Rectifier IRF6612TRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF6612TRPBF technical specifications.
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.97nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF6612TRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
