
N-Channel Power MOSFET featuring 30V Drain-to-Source Voltage (Vdss) and 30A Continuous Drain Current (ID). Offers a low 2.2mΩ Drain-to-Source On-Resistance (Rds On Max) for efficient power handling. Designed for surface mount applications with a maximum power dissipation of 2.8W and operating temperatures from -40°C to 150°C. Includes fast switching characteristics with an 8.1ns fall time and 27ns turn-off delay.
International Rectifier IRF6618 technical specifications.
Download the complete datasheet for International Rectifier IRF6618 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
