N-Channel Power MOSFET featuring 30V Drain-to-Source Voltage (Vdss) and 30A Continuous Drain Current (ID). Offers a low 2.2mΩ Drain-to-Source On-Resistance (Rds On Max) for efficient power handling. Designed for surface mount applications with a maximum power dissipation of 2.8W and operating temperatures from -40°C to 150°C. Includes fast switching characteristics with an 8.1ns fall time and 27ns turn-off delay.
Current Rating150A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6618 technical specifications.
General
Continuous Drain Current (ID)
30A
Current Rating
150A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.2R
Drain to Source Voltage (Vdss)
30V
Fall Time
8.1ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.64nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
2.2mR
RoHS Compliant
No
Series
HEXFET®
Turn-Off Delay Time
27ns
DC Rated Voltage
30V
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF6618 Datasheet
Download the complete datasheet for International Rectifier IRF6618 to view detailed technical specifications.
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