N-Channel Power MOSFET featuring 30V Drain-to-Source Voltage (Vdss) and 30A Continuous Drain Current (ID). Offers a low 2.2mΩ Drain-to-Source On-Resistance (Rds On Max) for efficient power handling. Designed for surface mount applications with a maximum power dissipation of 2.8W and operating temperatures from -40°C to 150°C. Includes fast switching characteristics with an 8.1ns fall time and 27ns turn-off delay.
Current Rating150A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6618 technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Current Rating | 150A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.2R |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.64nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF6618 Datasheet
Download the complete datasheet for International Rectifier IRF6618 to view detailed technical specifications.
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