Single N-Channel HEXFET Power MOSFET, 20V Drain-to-Source Breakdown Voltage, 30A Continuous Drain Current. Features low 2.2mΩ Rds(on) at 10V Vgs, 3mΩ Rds(on) at 4.5V Vgs, and 89W maximum power dissipation. Operates from -40°C to 150°C, with fast switching speeds including 9.3ns fall time, 21ns turn-on delay, and 25ns turn-off delay. Packaged in a DirectFET MX surface mount package, tape and reel supplied, RoHS compliant.
International Rectifier IRF6619TRPBF technical specifications.
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 5.04nF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 20V |
| Width | 5.05mm |
| RoHS | Compliant |
No datasheet is available for this part.
