N-channel power MOSFET with 25V drain-source breakdown voltage and 15A continuous drain current. Features low 6.3mR maximum drain-source on-resistance and 2.2W maximum power dissipation. Operates from -40°C to 150°C with a 1.8V nominal gate-source voltage. Surface mountable in a 6-pin Direct-FET SQ package, supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power34W
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Technical Specifications
International Rectifier IRF6622TR1PBF technical specifications.
General
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
8.9mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
6.3MR
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
1.45nF
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
34W
Radiation Hardening
No
Rds On Max
6.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
13ns
Turn-On Delay Time
9.4ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6622TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6622TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.