N-channel power MOSFET with 25V drain-source breakdown voltage and 15A continuous drain current. Features low 6.3mR maximum drain-source on-resistance and 2.2W maximum power dissipation. Operates from -40°C to 150°C with a 1.8V nominal gate-source voltage. Surface mountable in a 6-pin Direct-FET SQ package, supplied on tape and reel.
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International Rectifier IRF6622TR1PBF technical specifications.
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 8.9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 6.3MR |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 1.45nF |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Radiation Hardening | No |
| Rds On Max | 6.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9.4ns |
| Width | 3.95mm |
| RoHS | Compliant |
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