N-channel power MOSFET with 25V drain-source breakdown voltage and 15A continuous drain current. Features low 6.3mR maximum drain-source on-resistance and 2.2W maximum power dissipation. Operates from -40°C to 150°C with a 1.8V nominal gate-source voltage. Surface mountable in a 6-pin Direct-FET SQ package, supplied on tape and reel.
International Rectifier IRF6622TR1PBF technical specifications.
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