
30V single N-channel HEXFET power MOSFET in a DirectFET ST package. Features 16A continuous drain current, 30V drain-source breakdown voltage, and a maximum on-resistance of 5.4mΩ. Operates with a gate-source voltage up to 20V and offers fast switching speeds with turn-on delay of 13ns and fall time of 4.5ns. This surface-mount component is RoHS compliant and rated for a maximum power dissipation of 42W.
International Rectifier IRF6626TRPBF technical specifications.
Download the complete datasheet for International Rectifier IRF6626TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
