30V single N-channel HEXFET power MOSFET in a DirectFET ST package. Features 16A continuous drain current, 30V drain-source breakdown voltage, and a maximum on-resistance of 5.4mΩ. Operates with a gate-source voltage up to 20V and offers fast switching speeds with turn-on delay of 13ns and fall time of 4.5ns. This surface-mount component is RoHS compliant and rated for a maximum power dissipation of 42W.
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6626TRPBF technical specifications.
General
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7.1mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
5.4MR
Fall Time
4.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
2.38nF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
5.4mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
17ns
Turn-On Delay Time
13ns
DC Rated Voltage
30V
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6626TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6626TRPBF to view detailed technical specifications.
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