30V single N-channel HEXFET power MOSFET in a DirectFET ST package. Features 16A continuous drain current, 30V drain-source breakdown voltage, and a maximum on-resistance of 5.4mΩ. Operates with a gate-source voltage up to 20V and offers fast switching speeds with turn-on delay of 13ns and fall time of 4.5ns. This surface-mount component is RoHS compliant and rated for a maximum power dissipation of 42W.
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International Rectifier IRF6626TRPBF technical specifications.
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.4MR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 2.38nF |
| Lead Free | Lead Free |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 5.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 30V |
| Width | 3.95mm |
| RoHS | Compliant |
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