N-channel MOSFET featuring 25V drain-source breakdown voltage and 27A continuous drain current. Offers low 2.5mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.9V. Surface mountable in a DirectFET MX package, this component boasts a maximum power dissipation of 96W and operates within a temperature range of -40°C to 150°C. Key switching characteristics include a 6.7ns fall time and 17ns turn-off delay. RoHS compliant and lead-free.
Current Rating27A
MountingSurface Mount
PolarityN-CHANNEL
Power96W
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Technical Specifications
International Rectifier IRF6628TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 2.5MR |
| Dual Supply Voltage | 25V |
| Fall Time | 6.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.77nF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 96W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6628TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6628TR1PBF to view detailed technical specifications.
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