N-channel MOSFET featuring 25V drain-source breakdown voltage and 27A continuous drain current. Offers low 2.5mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.9V. Surface mountable in a DirectFET MX package, this component boasts a maximum power dissipation of 96W and operates within a temperature range of -40°C to 150°C. Key switching characteristics include a 6.7ns fall time and 17ns turn-off delay. RoHS compliant and lead-free.
Current Rating27A
MountingSurface Mount
PolarityN-CHANNEL
Power96W
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Technical Specifications
International Rectifier IRF6628TR1PBF technical specifications.
General
Continuous Drain Current (ID)
27A
Current Rating
27A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
2.5MR
Dual Supply Voltage
25V
Fall Time
6.7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.77nF
Lead Free
Lead Free
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.9V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
96W
Radiation Hardening
No
Rds On Max
2.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
17ns
Turn-On Delay Time
20ns
DC Rated Voltage
25V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6628TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6628TR1PBF to view detailed technical specifications.
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