IRF6628TR1PBF

Datasheet

N-CH MOSFET, 25V, 27A, 2.5mR, DirectFET, SMT

International Rectifier

IRF6628TR1PBF

Name: IRF6628TR1PBF International Rectifier
Brand: International Rectifier
SKU: IRF6628TR1PBF
Price: 3 USD
Availability: InStock

N-CH MOSFET, 25V, 27A, 2.5mR, DirectFET, SMT

N-channel MOSFET featuring 25V drain-source breakdown voltage and 27A continuous drain current. Offers low 2.5mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.9V. Surface mountable in a DirectFET MX package, this component boasts a maximum power dissipation of 96W and operates within a temperature range of -40°C to 150°C. Key switching characteristics include a 6.7ns fall time and 17ns turn-off delay. RoHS compliant and lead-free.

Current Rating27A

MountingSurface Mount

PolarityN-CHANNEL

Power96W

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Distributor	Package Type	Min Qty	4+	9+	90+	Stock	Action
Quest	-	4	3	2.25	2.1	96 In Stock	View

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Technical Specifications

International Rectifier IRF6628TR1PBF technical specifications.

General

Continuous Drain Current (ID)	27A
Current Rating	27A
Drain to Source Breakdown Voltage	25V
Drain to Source Resistance	3.3mR
Drain to Source Voltage (Vdss)	25V
Drain-source On Resistance-Max	2.5MR
Dual Supply Voltage	25V
Fall Time	6.7ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	3.77nF
Lead Free	Lead Free
Length	6.35mm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	2.8W
Mount	Surface Mount
Nominal Vgs	1.9V
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	96W
Radiation Hardening	No
Rds On Max	2.5mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Termination	SMD/SMT
Turn-Off Delay Time	17ns
Turn-On Delay Time	20ns
DC Rated Voltage	25V