Single N-channel HEXFET power MOSFET featuring 20V drain-source breakdown voltage and 16A continuous drain current. Offers low 5.6mR maximum drain-source on-resistance and 9.4mR typical resistance. Designed for surface mount applications in a DirectFET MP package, with fast switching speeds including a 4.3ns fall time. Operates from -40°C to 150°C with a maximum power dissipation of 2.3W. RoHS compliant and lead-free.
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6633TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 9.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5.6MR |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.676mm |
| Input Capacitance | 1.25nF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 9.7ns |
| DC Rated Voltage | 20V |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6633TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6633TRPBF to view detailed technical specifications.
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