Single N-channel HEXFET power MOSFET featuring 20V drain-source breakdown voltage and 16A continuous drain current. Offers low 5.6mR maximum drain-source on-resistance and 9.4mR typical resistance. Designed for surface mount applications in a DirectFET MP package, with fast switching speeds including a 4.3ns fall time. Operates from -40°C to 150°C with a maximum power dissipation of 2.3W. RoHS compliant and lead-free.
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
Quick Jump:
Technical Specifications
International Rectifier IRF6633TRPBF technical specifications.
General
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
9.4mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
5.6MR
Fall Time
4.3ns
Gate to Source Voltage (Vgs)
20V
Height
0.676mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
5.6mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
12ns
Turn-On Delay Time
9.7ns
DC Rated Voltage
20V
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6633TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6633TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
