Single N-channel HEXFET power MOSFET featuring 20V drain-source breakdown voltage and 16A continuous drain current. Offers low 5.6mR maximum drain-source on-resistance and 9.4mR typical resistance. Designed for surface mount applications in a DirectFET MP package, with fast switching speeds including a 4.3ns fall time. Operates from -40°C to 150°C with a maximum power dissipation of 2.3W. RoHS compliant and lead-free.
International Rectifier IRF6633TRPBF technical specifications.
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