Trans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R
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International Rectifier IRF6644TR1 technical specifications.
| Continuous Drain Current (ID) | 10.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10.3MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.21nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| RoHS | Compliant |
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