N-Channel Power MOSFET, 60V drain-source voltage, 86A continuous drain current, and 5.5mΩ maximum drain-source on-resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is designed for surface mounting and operates within a temperature range of -40°C to 150°C. It features a power dissipation of 2.8W and is supplied on tape and reel. The component is RoHS compliant.
Current Rating86A
MountingSurface Mount
Power2.8W
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Technical Specifications
International Rectifier IRF6648TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 86A |
| Current Rating | 86A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5.5MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6648TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6648TRPBF to view detailed technical specifications.
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