Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
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International Rectifier IRF6655TRPBF technical specifications.
| Continuous Drain Current (ID) | 19A |
| Current Rating | 4.2A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 53MR |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 62mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
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