N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 8.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.022-ohm drain-source on-resistance and 89W maximum power dissipation. Designed for surface mount applications, it operates within a temperature range of -40°C to 150°C and includes fast switching characteristics with turn-on delay of 11ns and turn-off delay of 24ns. The component is RoHS compliant and supplied in tape and reel packaging.
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International Rectifier IRF6662TRPBF technical specifications.
| Continuous Drain Current (ID) | 8.3A |
| Current Rating | 8.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 31MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 1.36nF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 5.05mm |
| RoHS | Compliant |
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