N-Channel Power MOSFET, featuring 100V Drain-Source Breakdown Voltage and 4.2A Continuous Drain Current. This single-element silicon Metal-oxide Semiconductor FET offers a low 62mΩ Drain-Source On-Resistance at a nominal 5V Gate-Source Voltage. With a maximum power dissipation of 42W and operating temperature range of -40°C to 150°C, it is suitable for surface mount applications. Key switching characteristics include a 7.4ns turn-on delay and 14ns turn-off delay. This component is ROHS compliant and supplied on tape and reel.
Current Rating4.2A
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6665TR1PBF technical specifications.
General
Continuous Drain Current (ID)
4.2A
Current Rating
4.2A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
62mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
62MR
Dual Supply Voltage
100V
Fall Time
4.3ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
530pF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
42W
Mount
Surface Mount
Nominal Vgs
5V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Radiation Hardening
No
Rds On Max
62mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
14ns
Turn-On Delay Time
7.4ns
DC Rated Voltage
100V
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6665TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6665TR1PBF to view detailed technical specifications.
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