N-Channel Power MOSFET, featuring 100V Drain-Source Breakdown Voltage and 4.2A Continuous Drain Current. This single-element silicon Metal-oxide Semiconductor FET offers a low 62mΩ Drain-Source On-Resistance at a nominal 5V Gate-Source Voltage. With a maximum power dissipation of 42W and operating temperature range of -40°C to 150°C, it is suitable for surface mount applications. Key switching characteristics include a 7.4ns turn-on delay and 14ns turn-off delay. This component is ROHS compliant and supplied on tape and reel.
Current Rating4.2A
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6665TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | 4.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 62MR |
| Dual Supply Voltage | 100V |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7.4ns |
| DC Rated Voltage | 100V |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6665TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6665TR1PBF to view detailed technical specifications.
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