N-channel silicon power MOSFET with 100V drain-to-source breakdown voltage and 4.2A continuous drain current. Features 62mΩ drain-to-source resistance and 2.2W maximum power dissipation. This single-element FET operates from -40°C to 150°C and is surface mountable in a tape and reel package. RoHS compliant with a 20V gate-to-source voltage rating.
Current Rating4.2A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6665TRPBF technical specifications.
General
Continuous Drain Current (ID)
4.2A
Current Rating
4.2A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
62mR
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
4.3ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
530pF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
62mR
RoHS Compliant
Yes
Turn-Off Delay Time
14ns
Turn-On Delay Time
7.4ns
DC Rated Voltage
100V
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6665TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6665TRPBF to view detailed technical specifications.
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