N-channel silicon power MOSFET with 100V drain-to-source breakdown voltage and 4.2A continuous drain current. Features 62mΩ drain-to-source resistance and 2.2W maximum power dissipation. This single-element FET operates from -40°C to 150°C and is surface mountable in a tape and reel package. RoHS compliant with a 20V gate-to-source voltage rating.
International Rectifier IRF6665TRPBF technical specifications.
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | 4.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 4.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 62mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7.4ns |
| DC Rated Voltage | 100V |
| Width | 3.95mm |
| RoHS | Compliant |
No datasheet is available for this part.
