N-channel silicon power MOSFET with 100V drain-to-source breakdown voltage and 4.2A continuous drain current. Features 62mΩ drain-to-source resistance and 2.2W maximum power dissipation. This single-element FET operates from -40°C to 150°C and is surface mountable in a tape and reel package. RoHS compliant with a 20V gate-to-source voltage rating.
International Rectifier IRF6665TRPBF technical specifications.
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