N-channel MOSFET featuring 60V drain-source breakdown voltage and 13.4A continuous drain current. Offers low 9mΩ drain-source resistance at a nominal 4V gate-source voltage. This surface mount component boasts a fast 7ns turn-on delay and 8.7ns fall time, with a maximum power dissipation of 89W. Operating temperature range is -40°C to 150°C, and it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6674TR1PBF technical specifications.
General
Continuous Drain Current (ID)
13.4A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
60V
Fall Time
8.7ns
Gate to Source Voltage (Vgs)
20V
Height
0.62mm
Input Capacitance
1.35nF
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
12ns
Turn-On Delay Time
7ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6674TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6674TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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