N-channel MOSFET featuring 60V drain-source breakdown voltage and 13.4A continuous drain current. Offers low 9mΩ drain-source resistance at a nominal 4V gate-source voltage. This surface mount component boasts a fast 7ns turn-on delay and 8.7ns fall time, with a maximum power dissipation of 89W. Operating temperature range is -40°C to 150°C, and it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6674TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 13.4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Fall Time | 8.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.62mm |
| Input Capacitance | 1.35nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 7ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6674TR1PBF Datasheet
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