MOSFET 30V 1 N-CH HEXFET DIRECTFET S1
Resistance0.0075R
MountingSurface Mount
PolarityN-CHANNEL
Power20W
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Technical Specifications
International Rectifier IRF6708S2TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.01nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 8.9mR |
| Resistance | 0.0075R |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9.1ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6708S2TRPBF Datasheet
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