N-channel MOSFET with 150V drain-source breakdown voltage and 28A continuous drain current. Features low 47mΩ drain-source on-resistance at 5V gate-source voltage, with a maximum of 56mΩ. Designed for surface mount applications with a compact 5.45mm x 5.05mm x 0.68mm package. Offers fast switching speeds with turn-on delay of 5.9ns and fall time of 15ns. RoHS compliant and operates within a temperature range of -40°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6775MTR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 56MR |
| Dual Supply Voltage | 150V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.68mm |
| Input Capacitance | 1.411nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 56mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 5.8ns |
| Turn-On Delay Time | 5.9ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6775MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6775MTR1PBF to view detailed technical specifications.
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