N-channel MOSFET with 150V drain-source breakdown voltage and 28A continuous drain current. Features low 47mΩ drain-source on-resistance at 5V gate-source voltage, with a maximum of 56mΩ. Designed for surface mount applications with a compact 5.45mm x 5.05mm x 0.68mm package. Offers fast switching speeds with turn-on delay of 5.9ns and fall time of 15ns. RoHS compliant and operates within a temperature range of -40°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6775MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
47mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
56MR
Dual Supply Voltage
150V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.68mm
Input Capacitance
1.411nF
Lead Free
Lead Free
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
56mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
5.8ns
Turn-On Delay Time
5.9ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6775MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6775MTR1PBF to view detailed technical specifications.
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