N-channel MOSFET with 150V drain-source breakdown voltage and 28A continuous drain current. Features low 47mΩ drain-source on-resistance at 5V gate-source voltage, with a maximum of 56mΩ. Designed for surface mount applications with a compact 5.45mm x 5.05mm x 0.68mm package. Offers fast switching speeds with turn-on delay of 5.9ns and fall time of 15ns. RoHS compliant and operates within a temperature range of -40°C to 150°C.
International Rectifier IRF6775MTR1PBF technical specifications.
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