IRF6785MTRPBF

Power Field-Effect Transistor, 3.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

MountingSurface Mount

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International Rectifier IRF6785MTRPBF technical specifications.

Continuous Drain Current (ID)

19A

Drain to Source Voltage (Vdss)

200V

Input Capacitance

1.5nF

Max Power Dissipation

2.8W

Mount

Surface Mount

Package Quantity

Packaging

Tape and Reel

Rds On Max

100mR

RoHS Compliant

Yes

Series

HEXFET®

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.