N-channel Power MOSFET, 25V Vds, 32A continuous drain current, 1.8mΩ max Rds(on) at 1.8V Vgs. Features 11ns fall time, 16ns turn-on/off delay, and 4.28nF input capacitance. Operates from -40°C to 150°C with 2.8W max power dissipation. Surface mount, 7-pin Direct-FET MX package, tape and reel. RoHS compliant.
MountingSurface Mount
Power2.8W
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Technical Specifications
International Rectifier IRF6795MTR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 1.8MR |
| Dual Supply Voltage | 25V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 4.28nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 16ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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