N-channel Power MOSFET, 25V Vds, 32A continuous drain current, 1.8mΩ max Rds(on) at 1.8V Vgs. Features 11ns fall time, 16ns turn-on/off delay, and 4.28nF input capacitance. Operates from -40°C to 150°C with 2.8W max power dissipation. Surface mount, 7-pin Direct-FET MX package, tape and reel. RoHS compliant.
MountingSurface Mount
Power2.8W
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Technical Specifications
International Rectifier IRF6795MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
32A
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
1.8MR
Dual Supply Voltage
25V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
4.28nF
Lead Free
Lead Free
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
1.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
16ns
Turn-On Delay Time
16ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6795MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6795MTR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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