MOSFET 25V Dual Control FET in S- Can
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International Rectifier IRF6802SDTR1PBF technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 23ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9.7ns |
| RoHS | Compliant |
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