The IRF6898MTR1PBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a continuous drain current of 35A and a drain to source breakdown voltage of 25V. The device has a drain to source resistance of 1.6mR and a maximum power dissipation of 2.1W. The IRF6898MTR1PBF is RoHS compliant and is packaged in a tape and reel format.
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International Rectifier IRF6898MTR1PBF technical specifications.
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 5.435nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 78W |
| Radiation Hardening | No |
| Rds On Max | 1.1mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 18ns |
| RoHS | Not CompliantNo |
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