
N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in an SOIC package. Features a continuous drain current of 3.5A, a drain-to-source breakdown voltage of 20V, and a maximum drain-source on-resistance of 100mΩ. This 2-element FET offers a threshold voltage of 3V, input capacitance of 320pF, and fast switching times with a turn-on delay of 7ns and fall time of 30ns. Operating within a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is RoHS compliant.
Sign in to ask questions about the International Rectifier IRF7101PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRF7101PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7101PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
