N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in an SOIC package. Features a continuous drain current of 3.5A, a drain-to-source breakdown voltage of 20V, and a maximum drain-source on-resistance of 100mΩ. This 2-element FET offers a threshold voltage of 3V, input capacitance of 320pF, and fast switching times with a turn-on delay of 7ns and fall time of 30ns. Operating within a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is RoHS compliant.
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International Rectifier IRF7101PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 95 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
| RoHS | Compliant |
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