IRF7101PBF

N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in an SOIC package. Features a continuous drain current of 3.5A, a drain-to-source breakdown voltage of 20V, and a maximum drain-source on-resistance of 100mΩ. This 2-element FET offers a threshold voltage of 3V, input capacitance of 320pF, and fast switching times with a turn-on delay of 7ns and fall time of 30ns. Operating within a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is RoHS compliant.