International Rectifier
IRF7103
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageSOIC
Current Rating3A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7103 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
50V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
50V
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Packaging
Bulk
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
SMD/SMT
DC Rated Voltage
50V
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF7103 Datasheet
Download the complete datasheet for International Rectifier IRF7103 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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