N-Channel MOSFET, 50V Vds, 3A continuous drain current, and 130mΩ maximum drain-source on-resistance. This dual-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 3V nominal gate-source voltage and 20V maximum gate-source voltage. Packaged in a lead-free SOIC (SO-8) surface-mount case, it offers a 2W power dissipation and operates within a temperature range of -55°C to 150°C. Turn-on delay is 9ns, and turn-off delay is 45ns.
PackageSOIC
Current Rating3A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7103PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
130mR
Dual Supply Voltage
50V
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
290pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
45ns
Turn-On Delay Time
9ns
DC Rated Voltage
50V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7103PBF Datasheet
Download the complete datasheet for International Rectifier IRF7103PBF to view detailed technical specifications.
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