N-Channel MOSFET, 50V Vds, 3A continuous drain current, and 130mΩ maximum drain-source on-resistance. This dual-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 3V nominal gate-source voltage and 20V maximum gate-source voltage. Packaged in a lead-free SOIC (SO-8) surface-mount case, it offers a 2W power dissipation and operates within a temperature range of -55°C to 150°C. Turn-on delay is 9ns, and turn-off delay is 45ns.
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International Rectifier IRF7103PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 130mR |
| Dual Supply Voltage | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 50V |
| Width | 4mm |
| RoHS | Compliant |
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