International Rectifier
IRF7103QTRPBF
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7103QTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 2.3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 255pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 5.1ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7103QTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7103QTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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