N-Channel MOSFET, 50V Vds, 3A continuous drain current, and 130mΩ maximum drain-source on-resistance. Features include a 20V gate-source voltage, 2W maximum power dissipation, and operating temperatures from -55°C to 150°C. This surface mount component, packaged in SOIC, offers fast switching with turn-on delay of 9ns and fall time of 25ns. It is RoHS compliant.
PackageSOIC
Current Rating3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7103TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
130mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
290pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
3V
Packaging
Tape and Reel
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
9ns
DC Rated Voltage
50V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7103TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7103TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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