
N-Channel MOSFET, 50V Vds, 3A continuous drain current, and 130mΩ maximum drain-source on-resistance. Features include a 20V gate-source voltage, 2W maximum power dissipation, and operating temperatures from -55°C to 150°C. This surface mount component, packaged in SOIC, offers fast switching with turn-on delay of 9ns and fall time of 25ns. It is RoHS compliant.
International Rectifier IRF7103TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 130mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Packaging | Tape and Reel |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 50V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7103TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
