Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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International Rectifier IRF7104 technical specifications.
| Continuous Drain Current (ID) | 375mA |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for International Rectifier IRF7104 to view detailed technical specifications.
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