P-channel MOSFET, 2.3A continuous drain current, 20V drain-source voltage, and 250mΩ maximum drain-source on-resistance. Features a 2-element silicon metal-oxide semiconductor FET design in a lead-free SOIC package for surface mounting. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 2W. Includes 290pF input capacitance and 12V gate-to-source voltage rating.
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International Rectifier IRF7104PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | -2.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 250mR |
| Dual Supply Voltage | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
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