P-channel MOSFET, 2.3A continuous drain current, 20V drain-source voltage, and 250mΩ maximum drain-source on-resistance. Features a 2-element silicon metal-oxide semiconductor FET design in a lead-free SOIC package for surface mounting. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 2W. Includes 290pF input capacitance and 12V gate-to-source voltage rating.
PackageSOIC
Current Rating-2.3A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7104PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2.3A
Current Rating
-2.3A
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
250mR
Dual Supply Voltage
-20V
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
290pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Termination
SMD/SMT
Turn-Off Delay Time
42ns
Turn-On Delay Time
12ns
DC Rated Voltage
-20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7104PBF Datasheet
Download the complete datasheet for International Rectifier IRF7104PBF to view detailed technical specifications.
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