Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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International Rectifier IRF7201TR technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 550pF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| RoHS | Not Compliant |
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