International Rectifier
IRF7201TRPBF
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7201TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 550pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 7ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7201TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7201TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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