Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 860pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Output Current | 5.3A |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 14ns |
| RoHS | Not CompliantNo |
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