International Rectifier
IRF7204
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7204 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.3A
Drain to Source Voltage (Vdss)
20V
Fall Time
68ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
860pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Output Current
5.3A
Package Quantity
95
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
60mR
RoHS Compliant
No
Series
HEXFET®
Turn-Off Delay Time
100ns
Turn-On Delay Time
14ns
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF7204 Datasheet
Download the complete datasheet for International Rectifier IRF7204 to view detailed technical specifications.
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