P-Channel MOSFET, surface mount, features 20V drain-source voltage and 5.3A continuous drain current. Offers a low 60mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 12V and a threshold voltage of -2.5V. Includes fast switching characteristics with turn-on delay of 14ns and fall time of 68ns. Maximum power dissipation is 2.5W, with operating temperatures from -55°C to 150°C.
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International Rectifier IRF7204PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2.5V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
| RoHS | Compliant |
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